DISPOSITIVO DI POTENZA IN CARBURO DI SILICIO CON RESISTENZA INTEGRATA E RELATIVO PROCEDIMENTO DI FABBRICAZIONE

DISPOSITIVO DI POTENZA IN CARBURO DI SILICIO CON RESISTENZA INTEGRATA E RELATIVO PROCEDIMENTO DI FABBRICAZIONE

A silicon carbide power device (100) has: a die (2) having a functional layer (4) of silicon carbide and an edge area (2a) and an active area (2b), surrounded by the edge area (2a); gate structures (3') formed on a top surface (4a) of the functional layer (4) in the active area (2b); and a gate...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GUARNERA, ALFIO, SAGGIO, MARIO GIUSEPPE
Format: Patent
Sprache:ita
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A silicon carbide power device (100) has: a die (2) having a functional layer (4) of silicon carbide and an edge area (2a) and an active area (2b), surrounded by the edge area (2a); gate structures (3') formed on a top surface (4a) of the functional layer (4) in the active area (2b); and a gate contact pad (18) for biasing the gate structures (3'). The device also has an integrated resistor (30) having a doped region (32), of a first conductivity type (N+), arranged at the front surface (4a) of the functional layer (4) in the edge area (2a); wherein the integrated resistor (30) defines an insulated resistance in the functional layer (4), interposed between the gate structures (3') and the gate contact pad (18).