REATTORE EPITASSIALE CON ISOLAMENTO TERMICO VARIABILE
The reactor (1000) for epitaxial deposition of semiconductor material on substrates comprises a reaction and deposition chamber (100) of box-like shape and adapted to house substrates; the substrates are adapted to be placed on a susceptor located in the chamber (100): at least a lower wall or an up...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | ita |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Speciale, Natale |
| description | The reactor (1000) for epitaxial deposition of semiconductor material on substrates comprises a reaction and deposition chamber (100) of box-like shape and adapted to house substrates; the substrates are adapted to be placed on a susceptor located in the chamber (100): at least a lower wall or an upper wall of the reaction and deposition chamber (100) there is a thermal insulating plate (151, 152) adapted to take at least a first position and a second position; when the plate takes said first position it provides a first level of thermal insulation to the chamber (100) from the surrounding environment; when the plate takes said second position it provides a second level of thermal insulation to the reaction and deposition chamber (100) from the surrounding environment; the first thermal insulation level is greater than the second thermal insulation level. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_IT202100023309A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>IT202100023309A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_IT202100023309A13</originalsourceid><addsrcrecordid>eNrjZDANcnUMCfEPclVwDfAMcQwO9nT0cVVw9vdT8Az293H0dfUL8VcIcQ3y9XT2VwhzDPJ0dPL0ceVhYE1LzClO5YXS3Ayqbq4hzh66qQX58anFBYnJqXmpJfGeIUYGRoYGBgZGxsYGlo6GxsSqAwA-Xilh</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>REATTORE EPITASSIALE CON ISOLAMENTO TERMICO VARIABILE</title><source>esp@cenet</source><creator>Speciale, Natale</creator><creatorcontrib>Speciale, Natale</creatorcontrib><description>The reactor (1000) for epitaxial deposition of semiconductor material on substrates comprises a reaction and deposition chamber (100) of box-like shape and adapted to house substrates; the substrates are adapted to be placed on a susceptor located in the chamber (100): at least a lower wall or an upper wall of the reaction and deposition chamber (100) there is a thermal insulating plate (151, 152) adapted to take at least a first position and a second position; when the plate takes said first position it provides a first level of thermal insulation to the chamber (100) from the surrounding environment; when the plate takes said second position it provides a second level of thermal insulation to the reaction and deposition chamber (100) from the surrounding environment; the first thermal insulation level is greater than the second thermal insulation level.</description><language>ita</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230309&DB=EPODOC&CC=IT&NR=202100023309A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230309&DB=EPODOC&CC=IT&NR=202100023309A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Speciale, Natale</creatorcontrib><title>REATTORE EPITASSIALE CON ISOLAMENTO TERMICO VARIABILE</title><description>The reactor (1000) for epitaxial deposition of semiconductor material on substrates comprises a reaction and deposition chamber (100) of box-like shape and adapted to house substrates; the substrates are adapted to be placed on a susceptor located in the chamber (100): at least a lower wall or an upper wall of the reaction and deposition chamber (100) there is a thermal insulating plate (151, 152) adapted to take at least a first position and a second position; when the plate takes said first position it provides a first level of thermal insulation to the chamber (100) from the surrounding environment; when the plate takes said second position it provides a second level of thermal insulation to the reaction and deposition chamber (100) from the surrounding environment; the first thermal insulation level is greater than the second thermal insulation level.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDANcnUMCfEPclVwDfAMcQwO9nT0cVVw9vdT8Az293H0dfUL8VcIcQ3y9XT2VwhzDPJ0dPL0ceVhYE1LzClO5YXS3Ayqbq4hzh66qQX58anFBYnJqXmpJfGeIUYGRoYGBgZGxsYGlo6GxsSqAwA-Xilh</recordid><startdate>20230309</startdate><enddate>20230309</enddate><creator>Speciale, Natale</creator><scope>EVB</scope></search><sort><creationdate>20230309</creationdate><title>REATTORE EPITASSIALE CON ISOLAMENTO TERMICO VARIABILE</title><author>Speciale, Natale</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_IT202100023309A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ita</language><creationdate>2023</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Speciale, Natale</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Speciale, Natale</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>REATTORE EPITASSIALE CON ISOLAMENTO TERMICO VARIABILE</title><date>2023-03-09</date><risdate>2023</risdate><abstract>The reactor (1000) for epitaxial deposition of semiconductor material on substrates comprises a reaction and deposition chamber (100) of box-like shape and adapted to house substrates; the substrates are adapted to be placed on a susceptor located in the chamber (100): at least a lower wall or an upper wall of the reaction and deposition chamber (100) there is a thermal insulating plate (151, 152) adapted to take at least a first position and a second position; when the plate takes said first position it provides a first level of thermal insulation to the chamber (100) from the surrounding environment; when the plate takes said second position it provides a second level of thermal insulation to the reaction and deposition chamber (100) from the surrounding environment; the first thermal insulation level is greater than the second thermal insulation level.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | ita |
| recordid | cdi_epo_espacenet_IT202100023309A1 |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | REATTORE EPITASSIALE CON ISOLAMENTO TERMICO VARIABILE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T05%3A21%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Speciale,%20Natale&rft.date=2023-03-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EIT202100023309A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |