REATTORE EPITASSIALE CON ISOLAMENTO TERMICO VARIABILE

The reactor (1000) for epitaxial deposition of semiconductor material on substrates comprises a reaction and deposition chamber (100) of box-like shape and adapted to house substrates; the substrates are adapted to be placed on a susceptor located in the chamber (100): at least a lower wall or an upper wall of the reaction and deposition chamber (100) there is a thermal insulating plate (151, 152) adapted to take at least a first position and a second position; when the plate takes said first position it provides a first level of thermal insulation to the chamber (100) from the surrounding environment; when the plate takes said second position it provides a second level of thermal insulation to the reaction and deposition chamber (100) from the surrounding environment; the first thermal insulation level is greater than the second thermal insulation level.