PROCEDIMENTO PER GESTIRE MEMORIE A SEMICONDUTTORE, INTERFACCIA, MEMORIA E DISPOSITIVO CORRISPONDENTI

PROCEDIMENTO PER GESTIRE MEMORIE A SEMICONDUTTORE, INTERFACCIA, MEMORIA E DISPOSITIVO CORRISPONDENTI

Non-volatile data memory space (F) for a range of user addresses is provided by means of a range of non-volatile flash memory locations (K, K+1) for writing data, the range of flash memory locations for writing data being larger (e.g. 4KB v. 100B) than the range of user addresses. Data for a same us...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MANGANO, DANIELE, DI STEFANO, GAETANO, CARRANO, MICHELE ALESSANDRO, RUGGIRELLO, ROBERTO SEBASTIANO
Format: Patent
Sprache:ita
Schlagworte:
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Non-volatile data memory space (F) for a range of user addresses is provided by means of a range of non-volatile flash memory locations (K, K+1) for writing data, the range of flash memory locations for writing data being larger (e.g. 4KB v. 100B) than the range of user addresses. Data for a same user address may thus be written in different flash memory locations (K, K+1) in a range of flash memory locations (K, K+1) with data storage endurance correspondingly improved.