FLUSSO DI PROCESSO PER LA REALIZZAZIONE DI MEMORIE NON VOLATILI CONRIMOZIONE DIFFERENZIATA DELL'OSSIDO SACRIFICALE

FLUSSO DI PROCESSO PER LA REALIZZAZIONE DI MEMORIE NON VOLATILI CONRIMOZIONE DIFFERENZIATA DELL'OSSIDO SACRIFICALE

Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxide in the NO-DPCC diagram including a series of steps that permit the removal of the oxide in two distinct moments from the matrix area and from the circuitry area. In this manner the active circuitry...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: PANSANA PIERO, SEVERGNINI CARLO, RAVAZZI LEONARDO
Format: Patent
Sprache:ita
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator PANSANA PIERO
SEVERGNINI CARLO
RAVAZZI LEONARDO
description Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxide in the NO-DPCC diagram including a series of steps that permit the removal of the oxide in two distinct moments from the matrix area and from the circuitry area. In this manner the active circuitry areas are preserved from the danger of breaking the tunnel oxide, thus avoiding the degradation of the quality of the oxides and increasing, in addition, the level of reliability of the device itself.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_IT1313155B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>IT1313155B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_IT1313155B13</originalsourceid><addsrcrecordid>eNqNyrEKwjAQxvEuDqK-w21ODqX0Ac70ggfXXEmiQ5ZSSpxEi_X90YLu8g3_b_iti6eVcwgKDUPn1dDyO_IgCJ5QOCVMrI4W0FKrngmcOrioYGRhMOo8t_pD1pInlxgjQkMiew2BG4WAxrNlg0LbYnUdbnPefbspwFI0p0OeHn2ep2HM9_zqOZbVZ3V9LKs_yBv8STg8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FLUSSO DI PROCESSO PER LA REALIZZAZIONE DI MEMORIE NON VOLATILI CONRIMOZIONE DIFFERENZIATA DELL'OSSIDO SACRIFICALE</title><source>esp@cenet</source><creator>PANSANA PIERO ; SEVERGNINI CARLO ; RAVAZZI LEONARDO</creator><creatorcontrib>PANSANA PIERO ; SEVERGNINI CARLO ; RAVAZZI LEONARDO</creatorcontrib><description>Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxide in the NO-DPCC diagram including a series of steps that permit the removal of the oxide in two distinct moments from the matrix area and from the circuitry area. In this manner the active circuitry areas are preserved from the danger of breaking the tunnel oxide, thus avoiding the degradation of the quality of the oxides and increasing, in addition, the level of reliability of the device itself.</description><edition>4</edition><language>ita</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020617&amp;DB=EPODOC&amp;CC=IT&amp;NR=1313155B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020617&amp;DB=EPODOC&amp;CC=IT&amp;NR=1313155B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PANSANA PIERO</creatorcontrib><creatorcontrib>SEVERGNINI CARLO</creatorcontrib><creatorcontrib>RAVAZZI LEONARDO</creatorcontrib><title>FLUSSO DI PROCESSO PER LA REALIZZAZIONE DI MEMORIE NON VOLATILI CONRIMOZIONE DIFFERENZIATA DELL'OSSIDO SACRIFICALE</title><description>Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxide in the NO-DPCC diagram including a series of steps that permit the removal of the oxide in two distinct moments from the matrix area and from the circuitry area. In this manner the active circuitry areas are preserved from the danger of breaking the tunnel oxide, thus avoiding the degradation of the quality of the oxides and increasing, in addition, the level of reliability of the device itself.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQxvEuDqK-w21ODqX0Ac70ggfXXEmiQ5ZSSpxEi_X90YLu8g3_b_iti6eVcwgKDUPn1dDyO_IgCJ5QOCVMrI4W0FKrngmcOrioYGRhMOo8t_pD1pInlxgjQkMiew2BG4WAxrNlg0LbYnUdbnPefbspwFI0p0OeHn2ep2HM9_zqOZbVZ3V9LKs_yBv8STg8</recordid><startdate>20020617</startdate><enddate>20020617</enddate><creator>PANSANA PIERO</creator><creator>SEVERGNINI CARLO</creator><creator>RAVAZZI LEONARDO</creator><scope>EVB</scope></search><sort><creationdate>20020617</creationdate><title>FLUSSO DI PROCESSO PER LA REALIZZAZIONE DI MEMORIE NON VOLATILI CONRIMOZIONE DIFFERENZIATA DELL'OSSIDO SACRIFICALE</title><author>PANSANA PIERO ; SEVERGNINI CARLO ; RAVAZZI LEONARDO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_IT1313155B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ita</language><creationdate>2002</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>PANSANA PIERO</creatorcontrib><creatorcontrib>SEVERGNINI CARLO</creatorcontrib><creatorcontrib>RAVAZZI LEONARDO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PANSANA PIERO</au><au>SEVERGNINI CARLO</au><au>RAVAZZI LEONARDO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FLUSSO DI PROCESSO PER LA REALIZZAZIONE DI MEMORIE NON VOLATILI CONRIMOZIONE DIFFERENZIATA DELL'OSSIDO SACRIFICALE</title><date>2002-06-17</date><risdate>2002</risdate><abstract>Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxide in the NO-DPCC diagram including a series of steps that permit the removal of the oxide in two distinct moments from the matrix area and from the circuitry area. In this manner the active circuitry areas are preserved from the danger of breaking the tunnel oxide, thus avoiding the degradation of the quality of the oxides and increasing, in addition, the level of reliability of the device itself.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language ita
recordid cdi_epo_espacenet_IT1313155B1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FLUSSO DI PROCESSO PER LA REALIZZAZIONE DI MEMORIE NON VOLATILI CONRIMOZIONE DIFFERENZIATA DELL'OSSIDO SACRIFICALE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T07%3A24%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PANSANA%20PIERO&rft.date=2002-06-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EIT1313155B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true