FLUSSO DI PROCESSO PER LA REALIZZAZIONE DI MEMORIE NON VOLATILI CONRIMOZIONE DIFFERENZIATA DELL'OSSIDO SACRIFICALE

FLUSSO DI PROCESSO PER LA REALIZZAZIONE DI MEMORIE NON VOLATILI CONRIMOZIONE DIFFERENZIATA DELL'OSSIDO SACRIFICALE

Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxide in the NO-DPCC diagram including a series of steps that permit the removal of the oxide in two distinct moments from the matrix area and from the circuitry area. In this manner the active circuitry...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PANSANA PIERO, SEVERGNINI CARLO, RAVAZZI LEONARDO
Format: Patent
Sprache:ita
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxide in the NO-DPCC diagram including a series of steps that permit the removal of the oxide in two distinct moments from the matrix area and from the circuitry area. In this manner the active circuitry areas are preserved from the danger of breaking the tunnel oxide, thus avoiding the degradation of the quality of the oxides and increasing, in addition, the level of reliability of the device itself.