PROCEDIMENTO PER PREPARARE PEZZI STAMPATI DI SILICIO MULTICRISTALLINO ESSENZIALMENTE PRIVI DI ZONE MARGINALI E L'IMPIEGO DI QUESTI PEZZI

The present invention relates to a process for the production of polycrystalline silicon mouldings substantially free of low lifetime edge regions and the use of these mouldings.

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Bibliographische Detailangaben
Hauptverfasser:	HABLER CHRISTIAN, LIEBERMANN JOHANNES
Format:	Patent
Sprache:	ita
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present invention relates to a process for the production of polycrystalline silicon mouldings substantially free of low lifetime edge regions and the use of these mouldings.