TRANSISTORE AD EFFETTO DI CAMPO SUPERFICIALE CON REGIONE DI SOURCE E/O DI DRAIN SCAVATE PER DISPOSITIVI ULSI

A surface field effect integrated transistor has the surface of the silicon in the source and drain areas (4, 4', 7, 7') lowered by 50-500 nm in respect to the surface of the silicon (2) underneath the gate electrode (1) by etching the silicon substrate before forming the source and drain...

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Bibliographische Detailangaben

Hauptverfasser:	ALDO MAGGIS, FABIO GUALANDRIS
Format:	Patent
Sprache:	ita
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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