LASER A SEMICONDUTTORE E PROCEDIMENTO DI REALIZZAZIONE

LASER A SEMICONDUTTORE E PROCEDIMENTO DI REALIZZAZIONE

Semiconductor laser comprising an active layer (3, 3') framed by two confinement layers (1 and 2), n-doped and p-doped respectively to produce a quantum well and furthermore including a monoatomic rare earth layer (5) whose excited level is in resonance with one of the electron levels of the qu...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JEAN PIERRE HIRTZ, CLAUDE WEISBUCH, JEAN YVES RAULIN
Format: Patent
Sprache:ita
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Beschreibung
Zusammenfassung:Semiconductor laser comprising an active layer (3, 3') framed by two confinement layers (1 and 2), n-doped and p-doped respectively to produce a quantum well and furthermore including a monoatomic rare earth layer (5) whose excited level is in resonance with one of the electron levels of the quantum well. The invention is applicable in particular to lasers emitting at a wavelength of 1.54 microns.