PROCESSO DI FABBRICAZIONE PER CELLE EPROM CON DIELETTRICO OSSIDO-NITRURO-OSSIDO
The process calls for covering of the dielectric (6) with a thin additional layer of polysilicon (10) which has the function of protecting the dielectric from any defects which would otherwise be introduced from the subsequent masking.
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| creator | GHIDINI GABRIELLA CRISENZA GIUSEPPE |
| description | The process calls for covering of the dielectric (6) with a thin additional layer of polysilicon (10) which has the function of protecting the dielectric from any defects which would otherwise be introduced from the subsequent masking. |
| format | Patent |
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| language | ita |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | PROCESSO DI FABBRICAZIONE PER CELLE EPROM CON DIELETTRICO OSSIDO-NITRURO-OSSIDO |
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