TENUTA AD ALTA PRESSIONE PARTICOLARMENTE PER CAMERA AD IONIZZAZIONE
A substrate penetrates a main seal in an ionization chamber filled with pressurized gas. In one form of the present invention, a second chamber is provided around the region of penetration. The substrate then also penetrates the second chamber. The second chamber is pressurized with a gas at a lower...
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Format: | Patent |
Sprache: | ita |
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Zusammenfassung: | A substrate penetrates a main seal in an ionization chamber filled with pressurized gas. In one form of the present invention, a second chamber is provided around the region of penetration. The substrate then also penetrates the second chamber. The second chamber is pressurized with a gas at a lower pressure than in the ionization chamber. Thus, the pressure differential across the main seal is lowered, thereby reducing the load on the main seal. |
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