CAMERA DA RIPRESA A STATO SOLIDO,PRESENTANTE UN BERSAGLIO FOTOSENSIBILE A SEMICONDUTTORE

CAMERA DA RIPRESA A STATO SOLIDO,PRESENTANTE UN BERSAGLIO FOTOSENSIBILE A SEMICONDUTTORE

A CCD solid state image sensor device. During the integration period the surface in the image pick-up section is switched alternately into inversion and into accumulation. Any excess of charge carriers which results from possible overexposure can thus be drained by means of recombination via sufaces...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: COLLET MARNIX GUILLAUME, SANTEN JOHANNES GERRIT VAN
Format: Patent
Sprache:ita
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A CCD solid state image sensor device. During the integration period the surface in the image pick-up section is switched alternately into inversion and into accumulation. Any excess of charge carriers which results from possible overexposure can thus be drained by means of recombination via sufaces states.