BARRIER LAYER TO SIOC ALKALI METALS

The invention relates to a glazing comprising a transparent glass substrate containing ions of at least one alkali metal, and a transparent layer of silicon oxycarbide (SiOxCy) having total thickness E with (a) a carbon-rich deep area extending from depth P3 to depth P4, where the C:Si atomic ratio...

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Bibliographische Detailangaben
Hauptverfasser:	THOUMAZET CLAIRE, HUIGNARD, ARNAUD, LANTE RAPHAEL, MELCHER MARTIN
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention relates to a glazing comprising a transparent glass substrate containing ions of at least one alkali metal, and a transparent layer of silicon oxycarbide (SiOxCy) having total thickness E with (a) a carbon-rich deep area extending from depth P3 to depth P4, where the C:Si atomic ratio is greater than or equal to 0.5, and (b) a superficial area having a low carbon content, extending from depth P1 to depth P2, where the C:Si atomic ratio is lesser than or equal to 0.4, with P1 < P2 < P3 < P4, and (P2-P1) + (P4-P3) < E the distance between Pi and P2 representing between 10 and 70% of total thickness E of the silicon oxycarbide layer and the distance between P3 and P4 representing between 10 and 70% of total thickness E of the silicon oxycarbide layer.