Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound

The present invention is a material for forming an organic film, including: a compound for forming an organic film (A) represented by the following general formula (1A); and an organic solvent (B),wherein Y represents an n1-valent organic group, a trivalent nitrogen atom, or a tetravalent carbon atom; n1 represents an integer of 3 to 8; and X is represented by the following general formula (1B),This provides: a compound that can form a cured organic film under inert gas conditions, having excellent heat resistance, filling and planarization characteristics of a pattern formed on a substrate, and having good adhesiveness to the substrate; and a material for forming an organic film containing the compound.