Stripping compositions for removing photoresists from semiconductor substrates

This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group co...

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Hauptverfasser: MIZUTANI Atsushi, SAKAMURI Raj, SUGISHIMA Yasuo, WOJTCZAK William A
Format: Patent
Sprache:eng ; heb
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Zusammenfassung:This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water, in which the composition is free of a compound comprising at least three hydroxyl groups. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.