Non-volatile semiconductor memory device

Provided is a non-volatile semiconductor memory device that, compared to conventional devices, can alleviate read errors which occur due to a voltage fluctuation at the time of a data read operation, and can also reduce an increase in power consumption due to a voltage fluctuation. In a case of a ma...

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Hauptverfasser:	YOSHIDA Shinji, SHINAGAWA Yutaka, TANIGUCHI Yasuhiro, SAKURAI Ryotaro, OWADA Fukuo, KASAI Hideo, OKUYAMA Kosuke, KAWASHIMA Yasuhiko
Format:	Patent
Sprache:	eng ; heb
Schlagworte:	ELECTRICITY
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creator	YOSHIDA Shinji SHINAGAWA Yutaka TANIGUCHI Yasuhiro SAKURAI Ryotaro OWADA Fukuo KASAI Hideo OKUYAMA Kosuke KAWASHIMA Yasuhiko
description	Provided is a non-volatile semiconductor memory device that, compared to conventional devices, can alleviate read errors which occur due to a voltage fluctuation at the time of a data read operation, and can also reduce an increase in power consumption due to a voltage fluctuation. In a case of a manufacturing defect in which, conventionally, a voltage fluctuation occurs throughout an entire non-volatile semiconductor memory device as a result of a connection of a drain-side selection gate electrode and a source-side selection gate electrode, which are of different types and to which different voltage values are highly likely to be applied; compared to the foregoing, a non-volatile semiconductor memory device (1) can alleviate read errors which occur due to a voltage fluctuation at the time of a data read operation, and can also reduce an increase in power consumption due to an unintended voltage fluctuation.
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subjects	ELECTRICITY
title	Non-volatile semiconductor memory device
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