Non-volatile semiconductor memory device

Provided is a non-volatile semiconductor memory device that, compared to conventional devices, can alleviate read errors which occur due to a voltage fluctuation at the time of a data read operation, and can also reduce an increase in power consumption due to a voltage fluctuation. In a case of a manufacturing defect in which, conventionally, a voltage fluctuation occurs throughout an entire non-volatile semiconductor memory device as a result of a connection of a drain-side selection gate electrode and a source-side selection gate electrode, which are of different types and to which different voltage values are highly likely to be applied; compared to the foregoing, a non-volatile semiconductor memory device (1) can alleviate read errors which occur due to a voltage fluctuation at the time of a data read operation, and can also reduce an increase in power consumption due to an unintended voltage fluctuation.