Non-volatile semiconductor storage device

Non-volatile semiconductor storage device

According to the present invention, in a memory cell forming unit (3a), four electrical disconnection units (13a, 13b, 13d, 13c (13e, 13f, 13h, 13g)) which can disconnect a source-side selection gate electrode (SG) from a drain-side selection gate electrode (DG) are provided along a side wall of an...

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Bibliographische Detailangaben
Hauptverfasser: YOSHIDA Shinji, SHINAGAWA Yutaka, TANIGUCHI Yasuhiro, SAKURAI Ryotaro, OWADA Fukuo, KASAI Hideo, OKUYAMA Kosuke, KAWASHIMA Yasuhiko
Format: Patent
Sprache:eng ; heb
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:According to the present invention, in a memory cell forming unit (3a), four electrical disconnection units (13a, 13b, 13d, 13c (13e, 13f, 13h, 13g)) which can disconnect a source-side selection gate electrode (SG) from a drain-side selection gate electrode (DG) are provided along a side wall of an extended electrode unit (15a (15b)), so that the number of positions at which the source-side selection gate electrode (SG) and the drain-side selection gate electrode (DG) are disconnected is increased. Accordingly, compared to the conventional technologies, erroneous reading operations which are caused by voltage variation during a data reading operation can be further prevented.