METHOD FOR BILAYER RESIST PLASMA ETCH

METHOD FOR BILAYER RESIST PLASMA ETCH

A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then SiCl4 gas flows into the etch chamber. Next, a plasma i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WENDY NGUYEN, CHRIS LEE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then SiCl4 gas flows into the etch chamber. Next, a plasma is struck in the etch chamber while flowing the SiCl4 gas. Then the bilayer resist is etched.