Electroless plating

An Al bond pad (1) of a semiconductor metallisation is coated with Ni (4) in a simple process. The substrate is etched to remove oxide, and is subsequently rinsed in a non-aqueous liquid. With the non-aqueous liquid (acetone) still on the surface the substrate is placed in an electroless bath having...

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Bibliographische Detailangaben
Hauptverfasser:	PATRICIA A. MURPHY, ELAINE GEARY, JAMES F. ROHAN, JOHN BARRETT, JANE BOARDMAN, ALAN MATHEWSON
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	An Al bond pad (1) of a semiconductor metallisation is coated with Ni (4) in a simple process. The substrate is etched to remove oxide, and is subsequently rinsed in a non-aqueous liquid. With the non-aqueous liquid (acetone) still on the surface the substrate is placed in an electroless bath having a salt complex containing metal ions as cations and a reducing agent as anions. The bath temperature is higher than boiling point of the non-aqueous rinse solution so that there is immediate evaporation.