METHOD AND DEVICE FOR DETECTING THICKNESS OF LAYER OF THE SEMICONDUCTOR LAYER STRUCTURES

PCT No. PCT/HU88/00030 Sec. 371 Date Feb. 8, 1989 Sec. 102(e) Date Feb. 8, 1989 PCT Filed May 4, 1988 PCT Pub. No. WO88/09053 PCT Pub. Date Nov. 17, 1988.In a process for determining the layer thickness of semiconductor layer structures, a sample of a multilayer semi-conductor (4) is placed in contact with an electrolyte (2) then subjected to anodic etching during which the depth of etching is determined by integration of the current. During etching, the sample (4) is also excited by an electric signal and the real component of the admittance and hence the conductance of the probe at the frequency of excitation is determined, the extreme values of this component are analyzed, and the values of the depth of etching corresponding to these extremes, which characterize the junctions between the layers of the sample (4) tested, are determined. The installation for implementing the procedure contains a cell (1) filled with electrolyte (2) in which is immersed a graphite electrode (5), a saturated calomel electrode (6), and a platinum electrode (7) surrounding the surface of the sample (4) subjected to etching, electrodes (8,9) neither of which touch the surface of the sample (4) subjected to etching, a potentiostat (13) which is connected to the calomel electrode (6) and the direct current source (12), the current integrator (14), which receives the etching current intensity signal, a generator (15) which emits a periodic signal between the sample (14) and the metal electrode, and the measurement element (16) for measuring the conductance of the sample (4).