METHOD AND INSTRUMENT FOR MEASURING CHANGE IN TRANSIENT CAPACITY OF SEMICONDUCTING ELEMENTS

A Deep Level Transient Spectroscopy (DLTS) method in which a high frequency measuring signal is applied continuously on a semiconductor junction, and exciting pulses are generated which are coupled through fast semiconductor switching elements to the junction to alternatively bias the junction in re...

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Bibliographische Detailangaben
Hauptverfasser:	KISS,JOZSEF,HU, FERENCZI,GYOERGY,HU, HORVATH,PETER,HU, TOTH,FERENC,HU, BODA,JANOS,HU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A Deep Level Transient Spectroscopy (DLTS) method in which a high frequency measuring signal is applied continuously on a semiconductor junction, and exciting pulses are generated which are coupled through fast semiconductor switching elements to the junction to alternatively bias the junction in reverse and forward (or slightly reverse) directions. The high frequency measuring signal passed through the junction is evaluated by means of a lock-in amplifier phase-locked with a constant phase angle, independent of the repetition rate of the exciting pulses. The evaluation circuits of the apparatus including the lock-in amplifier are controlled by switching elements driven by control signals generated from the exciting pulses.