METHOD OF ETCHING USING A SACRIFICIAL SUBSTRATE

METHOD OF ETCHING USING A SACRIFICIAL SUBSTRATE

A method of etching a silicon substrate is described. The method includes bonding a first silicon substrate to a sacrificial silicon substrate. The first silicon substrate is etched. A pressure is applied at an interface of the first silicon substrate and the sacrificial silicon substrate to cause t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BIRKMEYER, JEFFREY, DEMING, STEPHEN, R
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
SEMICONDUCTOR DEVICES
TRANSPORTING
WORKING CEMENT, CLAY, OR STONE
WORKING STONE OR STONE-LIKE MATERIALS
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Beschreibung
Zusammenfassung:A method of etching a silicon substrate is described. The method includes bonding a first silicon substrate to a sacrificial silicon substrate. The first silicon substrate is etched. A pressure is applied at an interface of the first silicon substrate and the sacrificial silicon substrate to cause the first silicon substrate to separate from the sacrificial silicon substrate. An apparatus having metal blades can be used to separate the substrates.