METHOD FOR PRODUCING MONOISOTOPIC SILICON SI -28

The invention relates to the metallurgy and in particular to a method for the production of single isotope silicon from inorganic compounds enriched by Si-28. According to the invention, silane is obtained from silicon tetrafluoride through reduction of silicon tetrafluoride by calcium hydride at a temperature of 180-200 DEG ; silane thus obtained is then decomposed at a high temperature (800-900 DEG C), whereby the deposition rate of the single isotope silicon on a substrate is lower or equal than 0.5 mm/hour. Deposition of single isotope silicon on the substrate is mainly controlled by modifying the speed of the silane supply. Deposition occurs firstly on a single isotope silicon substrate, whereby the melting point thereof is higher than the temperature of the silane deposition, and then on a single isotope silicon ingot obtained at the previous stage.