1.6 TO 3 GHz OSCILLATOR

A high-frequency oscillator is provided for a frequency range of 1.6 to 3 GHz. An oscillator stage includes an oscillator transistor and a voltage-controlled resonator unit. A buffer stage is connected at an output of the oscillator stage. The resonator unit includes an open resonator in the form of...

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Bibliographische Detailangaben
Hauptverfasser:	VEITH, PETER, ERNST, GILA, JANOS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRONIC CIRCUITRY CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION OF NOISE BY SUCH CIRCUITS GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS
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Beschreibung
Zusammenfassung:	A high-frequency oscillator is provided for a frequency range of 1.6 to 3 GHz. An oscillator stage includes an oscillator transistor and a voltage-controlled resonator unit. A buffer stage is connected at an output of the oscillator stage. The resonator unit includes an open resonator in the form of an etched structure with a wavelength which is shorter than lambda/4 (where lambda is an oscillator length). The resonator unit includes a voltage-controlled variable-capacitance diode, and a resonator terminal is connected between the voltage-controlled variable-capacitance diode of the resonator unit and the oscillator transistor of the oscillator stage. The resonator is preferably an open microstrip resonator, and the stages are disposed in a standardized housing in SMD (surface mounted device) technology.