METHOD FOR PRODUCTION OF ELEMENT FOR SOLAR PHOTOELECTRIC TRANSFORMER
A method comprises creation of p-n barrier from the layer of boron- or phosphoprous-silicate glass, formation of contact net and thermal treatment. The glass layer on the semiconductive body is created by applying it with the mixture of the initial components of boron- or phosphoprous-silicate glass...
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Sprache: | eng |
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Zusammenfassung: | A method comprises creation of p-n barrier from the layer of boron- or phosphoprous-silicate glass, formation of contact net and thermal treatment. The glass layer on the semiconductive body is created by applying it with the mixture of the initial components of boron- or phosphoprous-silicate glass with the subsequent melting under temperature 900-10000C during 15-20 minutes. The formation of the contact net is effected by the method of screen print, and thermal treatment is effected under temperature 500-6000C during 1-2 hours. |
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