Improvements in barrier layer cells

742,237. Semiconductor devices. ASSOCIATED ELECTRICAL INDUSTRIES, Ltd. Oct. 23, 1952 [Oct. 24, 1951], No. 8343/55. Divided out of 742,172. Class 37. A sharply defined PN junction is provided by fusing a piece of N-type semiconductor to a piece of P-type by passing a current pulse between them, prefe...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	BILLIG ERNST
Format:	Patent
Sprache:	eng
Schlagworte:	AUXILIARY PROCESSES IN PHOTOGRAPHY BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	742,237. Semiconductor devices. ASSOCIATED ELECTRICAL INDUSTRIES, Ltd. Oct. 23, 1952 [Oct. 24, 1951], No. 8343/55. Divided out of 742,172. Class 37. A sharply defined PN junction is provided by fusing a piece of N-type semiconductor to a piece of P-type by passing a current pulse between them, preferably in an inert atmosphere. The material may be germanium and/or silicon, and consist preferably of single crystals. Two or more junctions may be produced for use in transistor or photo-transistor devices. The Provisional Specification also refers to other methods of forming PN junctions as described in Specification 742,172.