Radiation detector

A device uses an interpenetrating network (IPN) as a bulk heterojunction (BHJ) to convert incoming radiation (for example X-rays, gamma) into positive and negative electrical charges. A first semiconductor material such as P3HT transports positive electrical charges and a second semiconductor materi...

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Bibliographische Detailangaben
1. Verfasser: Ravi Pradip Sembukuttiarachilage Silva
Format: Patent
Sprache:eng
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Zusammenfassung:A device uses an interpenetrating network (IPN) as a bulk heterojunction (BHJ) to convert incoming radiation (for example X-rays, gamma) into positive and negative electrical charges. A first semiconductor material such as P3HT transports positive electrical charges and a second semiconductor material such as PCBM transports negative electrical charges. Nanoparticles (NP) such as Bismuth oxides (Bi2O3) provide nano-structured agglomerates disbursed within the network. These use regions of different relative permittivity capable of creating dielectric inhomogeneities within the nano-structured agglomerates, which may include agglomerate porosity or void fraction. The nanoparticles may be doped, for example with Caesium (Cs) or lanthanum (La).