Methods for the provision of a coated graphene layer structure on a silicon-containing wafer

A method for providing a coated graphene layer structure 410 on a silicon-containing wafer 435, the method comprising: providing a wafer stack 420 comprising, a sapphire substrate 400, a nitride layer 405, a graphene layer structure 410 and a dielectric passivation layer 415; forming or adhering 300...

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Bibliographische Detailangaben

1. Verfasser:	Ivor Guiney
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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