Methods for the provision of a coated graphene layer structure on a silicon-containing wafer

A method for providing a coated graphene layer structure 410 on a silicon-containing wafer 435, the method comprising: providing a wafer stack 420 comprising, a sapphire substrate 400, a nitride layer 405, a graphene layer structure 410 and a dielectric passivation layer 415; forming or adhering 300 a further layer 435 onto the exposed upper surface of the dielectric passivation layer 415; and removing the substrate 400 by laser lift-off 305 to expose a surface of the nitride layer 405; wherein the nitride layer 405 comprises first and second surfaces each independently formed of aluminium nitride or boron nitride. Also disclosed is a similar method [Fig. 2] wherein the method further comprises wafer bonding the exposed surface of the nitride layer to a surface [235b', Fig. 2] of a silicon-containing wafer [235, Fig. 2] after the step of removing the substrate [225, Fig 2].