Thin film transistor and display device comprising the same

Thin film transistor 300 comprises forming substrate 110, first and second conductive layers 81-82, buffer layer 120, active layer 130, gate insulating layer 140, gate electrode 150, and source and drain electrodes 161-162 connected to the active layer. The active layer is between the first conductive layer and the source and drain electrodes. The active layer includes channel 130n contacting first and second connections 131-132. The channel includes first and second areas AR1-AR2 extending from the first to second connection. The first and second conductive layers overlap the channel and connect to the first connection. The second conductive layer is spaced from the first conductive layer. The channel is between the second conductive layer and gate electrode. The channel includes third area AR3 spaced from the first with the second therebetween. First to third areas extend from the first to second connections. First spacer 11 overlaps the channel in the second area but not the first and is between the substrate and active layer. The first area is closer to the first conductive layer than the second. The first conductive layer overlaps the first area but not the second and third.