CFET with independent gate control and low parasitic capacitance

A semiconductor structure is provided that includes a second nanosheet device of a second conductivity type stacked over a first nanosheet device of a first conductivity type that is different from the second conductivity type. Each of the first and second nanosheet devices includes at least one sem...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Juntao Li, Ruilong Xie, Kangguo Cheng, Carl Radens
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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