Light emitting display device

A light emitting display device includes an auxiliary power electrode AXE on a substrate SUB, a protection layer comprising a passivation layer PAS and an overcoat layer OC, a contact portion CA passing through the protection layer to expose a portion of the auxiliary power electrode AXE, and a metal pattern (Fig. 5: MP) on the contact portion CA and the protection layer at a periphery of the contact portion CA, separate from the pixel electrode. A thin film transistor (TFT) TR is connected to a light emitting device ED comprising a pixel electrode PE formed on the overcoat layer OC, a light emitting layer EL and a common cathode electrode CE. A bank layer BA is disposed on the pixel electrode PE and overcoat layer OC to define openings of subpixels and contact portions CA. The auxiliary power electrode AXE connects the common cathode electrode with an auxiliary power line (Fig. 2: EVSS) to transfer an auxiliary power or low voltage level to the common electrode, and the auxiliary electrode and auxiliary power line may be provided as a single body. An undercut structure UC including an undercut region UCA is disposed at the contact portion CA on the auxiliary power electrode AXE in a mushroom shaped island pattern, formed from a first pattern PAS_P of same material as the passivation layer and a second pattern OC_P of same material as the overcoat layer. The emission layer EL is disconnected in the undercut region. The common electrode CE may be electrically connected with the auxiliary power electrode AXE exposed at the contact portion via the metal pattern.