Method for enhancing aggregation state stability of organic semiconductor thin film

The present invention relates to the technical field of organic semiconductors. Disclosed is a method for enhancing aggregation state stability of an organic semiconductor thin film, comprising: constructing an organic semiconductor thin film; and then introducing a trace amount of nanoparticles on the surface of the constructed organic semiconductor thin film or inside the thin film, wherein the nanoparticles are uniform and discontinuous, and do not affect electrical performance of the organic semiconductor thin film itself. The grain boundary, dislocation, stacking fault, surface and the like of the organic semiconductor thin film are pinned by the nanoparticles, resulting in an increase in a barrier for the change in an aggregation state structure of the organic semiconductor thin film, thereby enhancing the aggregation state stability of the organic semiconductor thin film, and further greatly increasing the highest working temperature and prolonging the storage life of an organic field effect transistor. Under a normal-temperature storage condition, the morphology of the stable organic semiconductor having the nanoparticles introduced is almost not changed, thereby ensuring the stability of electrical performance of an organic transistor device prepared from the organic semiconductor thin film in a high-temperature working environment and an actual atmospheric environment.