Inverted wide base double magnetic tunnel junction device
A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack (204), forming a spin conducting layer (206) on the first magnetic tunnel junction stack (204), and forming a second magnetic tunnel junction stack (704)...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack (204), forming a spin conducting layer (206) on the first magnetic tunnel junction stack (204), and forming a second magnetic tunnel junction stack (704) on the spin conducting layer (206). The second magnetic tunnel junction stack (704) has a width that is greater than a width of the first magnetic tunnel junction stack (204). The double magnetic tunnel junction device can achieve an increase in the switching efficiency relative to related single magnetic tunnel junction device, and may achieve an increased magnetoresistance radio which potentially reducing the switching current. |
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