Method for continuously mass-manufacturing graphene using high-temperature plasma emission method and graphene manufactured by manufacturing method

A method for continuously mass-manufacturing graphene using a high-temperature plasma emission method comprises: injecting an inert gas into a plasma device to generate plasma; injecting expandable graphite and graphite intercalation compounds (GIC) into the plasma device in constant amounts; and al...

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Bibliographische Detailangaben
Hauptverfasser: Kyoung Jeong Bae, Sul Hwa Choi, Dinh Huong Nguyen
Format: Patent
Sprache:eng
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Zusammenfassung:A method for continuously mass-manufacturing graphene using a high-temperature plasma emission method comprises: injecting an inert gas into a plasma device to generate plasma; injecting expandable graphite and graphite intercalation compounds (GIC) into the plasma device in constant amounts; and allowing the expandable graphite and GIC to be expanded by thermal plasma treatment so that graphene is exfoliated. The method may further comprise the steps of: passing the exfoliated graphene through a vacuum chamber so that the exfoliated graphene is collected through a collector; and cooling the collected graphene to obtain graphene in the form of a powder. The method may be characterised in that the following equation is satisfied: 99≤ Y/X×100≤ 100; wherein X indicates the amount of purified graphite contained in the expandable graphite injected in the method and Y indicates the amount of graphene obtained.