Modification of stress response and adhesion behavior of dielectric through tuning of mechanical properties
The disclosed subject matter relates to a dielectric stack that includes a dielectric layer formed from a dielectric material that includes one or more constituent components each having a Tg value of 70 °C or lower and that is annealed at a temperature exceeding the highest Tg value of the one or m...
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| Hauptverfasser: | , |
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The disclosed subject matter relates to a dielectric stack that includes a dielectric layer formed from a dielectric material that includes one or more constituent components each having a Tg value of 70 °C or lower and that is annealed at a temperature exceeding the highest Tg value of the one or more constituent components. |
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