Improved transfer printing for RF applications

A semiconductor structure for RF applications comprises:a target substrate;a micro-transfer printed (μTP) gallium nitride (GaN) chiplet on said target substrate, wherein said chiplet comprises a GaN device and a dummy metal layer.

Bibliographische Detailangaben

Hauptverfasser:	Brice Grandchamp, Lucas Iogna-Prat, Imène Lahbib, Frédéric Drillet, Jérôme Loraine, Gregory U'ren
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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