Improved transfer printing for RF applications

Improved transfer printing for RF applications

A semiconductor structure for RF applications comprises:a target substrate;a micro-transfer printed (μTP) gallium nitride (GaN) chiplet on said target substrate, wherein said chiplet comprises a GaN device and a dummy metal layer.

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Bibliographische Detailangaben
Hauptverfasser: Brice Grandchamp, Lucas Iogna-Prat, Imène Lahbib, Frédéric Drillet, Jérôme Loraine, Gregory U'ren
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure for RF applications comprises:a target substrate;a micro-transfer printed (μTP) gallium nitride (GaN) chiplet on said target substrate, wherein said chiplet comprises a GaN device and a dummy metal layer.