Semiconductor devices

A device (e.g. organic liquid crystal devices / OLCD and organic thin film transistor / OTFT devices) comprising a stack of layers defining semiconductor devices. The stack comprises a semiconductor layer 14a (Figure 14) defining semiconductor channels of the semiconductor devices. The first metal l...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Jan Jongman, Brian Asplin
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A device (e.g. organic liquid crystal devices / OLCD and organic thin film transistor / OTFT devices) comprising a stack of layers defining semiconductor devices. The stack comprises a semiconductor layer 14a (Figure 14) defining semiconductor channels of the semiconductor devices. The first metal layer 32a is above and the second metal layer 6 is below the semiconductor layer 14a with a patterned light absorbing (light shielding) layer 20a between the metal layers 6, 32a. A method of manufacturing the same comprises forming the stack of layers in situ on a support substrate 2, wherein the method further comprises patterning the light absorbing layer 20a and semiconductor layer 14a using a resist mask. The light absorbing layer 20a may be between the semiconductor layer 14a and support substrate 2 and may interface with the semiconductor channels. The semiconductor devices may form part of a half-cell for a liquid crystal cell.