Transfer printing for RF applications
A semiconductor structure for RF applications comprises:a first μTP GaN transistor on an SOI wafer or die; anda first resistor connected to the gate of said first transistor.
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A semiconductor structure for RF applications comprises:a first μTP GaN transistor on an SOI wafer or die; anda first resistor connected to the gate of said first transistor. |
|---|