Dual gate metal-oxide-semiconductor field-effect transistor
A dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) may include a MOSFET having a channel region, a drain, and a source, a first gate formed proximate to the channel region, a drain extension region formed proximate to the drain, and a second gate formed proximate to the drain ext...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) may include a MOSFET having a channel region, a drain, and a source, a first gate formed proximate to the channel region, a drain extension region formed proximate to the drain, and a second gate formed proximate to the drain extension region. |
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