Dual gate metal-oxide-semiconductor field-effect transistor

A dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) 102A has a drain region 116, a source region 122/124, a first gate 132 proximate a channel region 142, a drain extension region 114 formed proximate the drain region 116, and a second gate 140 proximate the drain extension region 114. The second gate 140 may be a field plate formed from a metalization layer above a surface of a semiconductor substrate of the MOSFET, or formed as a back plate within the substrate. The MOSFET may be operated by applying a first voltage to the first gate 132 to modulate conduction, and applying a second voltage to the second gate 140 to modulate a breakdown voltage or a drain-to-source resistance. A computer controlled integrated circuit design system for modelling/testing/verification of a double-gate MOSFET includes a processor, and also a memory to provide a software logic synthesizer module which receives a file describing the MOSFET as being operable in two different states based on a toggling variable, and which generates functional logic.