Integrated circuit structure

Integrated circuit structure

A metal interconnect comprising cobalt and method of forming a metal interconnect comprising cobalt are described. In an embodiment, a metal interconnect comprising cobalt includes a dielectric layer disposed on a substrate, an opening formed in the dielectric layer such that the substrate is expose...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Christopher J Jezewski, Tejaswi K Indukuri, Florian Gstrein, James S Clarke, Daniel J Zierath
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A metal interconnect comprising cobalt and method of forming a metal interconnect comprising cobalt are described. In an embodiment, a metal interconnect comprising cobalt includes a dielectric layer disposed on a substrate, an opening formed in the dielectric layer such that the substrate is exposed. The embodiment further includes a seed layer disposed over the substrate and a fill material comprising cobalt formed within the opening and on a surface of the seed layer.