Layered vertical field effect transistor and methods of fabrication

A III-nitride vertical field effect transistor (FET) comprises a base plate 1, a mask layer 6 on the base plate having openings for exposure of the base plate; a drain 2 grown epitaxially onto regions of the base plate exposed by the openings of the mask layer; an insulation layer 3 grown epitaxiall...

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Bibliographische Detailangaben

1. Verfasser:	Quanzhong Jiang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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