MOPA with high-gain solid-state amplifier
Radiation from a VBG-locked diode-laser at a locked wavelength of 878.6 nm is focused into a 30-mm long Nd:YVO4 optical amplifier crystal for optically pumping the crystal (24). The crystal amplifies a beam of seed-pulses from a fiber MOPA (12). The power of pump radiation is about 75 Watts. The rad...
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creator | DAVID CLUBLEY BURLY CUMBERLAND |
description | Radiation from a VBG-locked diode-laser at a locked wavelength of 878.6 nm is focused into a 30-mm long Nd:YVO4 optical amplifier crystal for optically pumping the crystal (24). The crystal amplifies a beam of seed-pulses from a fiber MOPA (12). The power of pump radiation is about 75 Watts. The radiation is focused into a beamwaist having a minimum diameter of about 600 micrometers. This provides an amplifier having a high gain-factor well over 100. The high-gain factor provides a gain-shaping effect on the seed-pulse beam which overcomes thermal aberrations inherent in such high-power pumping, thereby producing an amplified seed-pulse beam with M2 less than 1.3. |
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The crystal amplifies a beam of seed-pulses from a fiber MOPA (12). The power of pump radiation is about 75 Watts. The radiation is focused into a beamwaist having a minimum diameter of about 600 micrometers. This provides an amplifier having a high gain-factor well over 100. The high-gain factor provides a gain-shaping effect on the seed-pulse beam which overcomes thermal aberrations inherent in such high-power pumping, thereby producing an amplified seed-pulse beam with M2 less than 1.3.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160106&DB=EPODOC&CC=GB&NR=2527833A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160106&DB=EPODOC&CC=GB&NR=2527833A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAVID CLUBLEY</creatorcontrib><creatorcontrib>BURLY CUMBERLAND</creatorcontrib><title>MOPA with high-gain solid-state amplifier</title><description>Radiation from a VBG-locked diode-laser at a locked wavelength of 878.6 nm is focused into a 30-mm long Nd:YVO4 optical amplifier crystal for optically pumping the crystal (24). The crystal amplifies a beam of seed-pulses from a fiber MOPA (12). The power of pump radiation is about 75 Watts. The radiation is focused into a beamwaist having a minimum diameter of about 600 micrometers. This provides an amplifier having a high gain-factor well over 100. The high-gain factor provides a gain-shaping effect on the seed-pulse beam which overcomes thermal aberrations inherent in such high-power pumping, thereby producing an amplified seed-pulse beam with M2 less than 1.3.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND09Q9wVCjPLMlQyMhMz9BNT8zMUyjOz8lM0S0uSSxJVUjMLcjJTMtMLeJhYE1LzClO5YXS3Azybq4hzh66qQX58anFBYnJqXmpJfHuTkamRuYWxsaOxoRVAAAU-icv</recordid><startdate>20160106</startdate><enddate>20160106</enddate><creator>DAVID CLUBLEY</creator><creator>BURLY CUMBERLAND</creator><scope>EVB</scope></search><sort><creationdate>20160106</creationdate><title>MOPA with high-gain solid-state amplifier</title><author>DAVID CLUBLEY ; BURLY CUMBERLAND</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_GB2527833A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>DAVID CLUBLEY</creatorcontrib><creatorcontrib>BURLY CUMBERLAND</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAVID CLUBLEY</au><au>BURLY CUMBERLAND</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MOPA with high-gain solid-state amplifier</title><date>2016-01-06</date><risdate>2016</risdate><abstract>Radiation from a VBG-locked diode-laser at a locked wavelength of 878.6 nm is focused into a 30-mm long Nd:YVO4 optical amplifier crystal for optically pumping the crystal (24). The crystal amplifies a beam of seed-pulses from a fiber MOPA (12). The power of pump radiation is about 75 Watts. The radiation is focused into a beamwaist having a minimum diameter of about 600 micrometers. This provides an amplifier having a high gain-factor well over 100. The high-gain factor provides a gain-shaping effect on the seed-pulse beam which overcomes thermal aberrations inherent in such high-power pumping, thereby producing an amplified seed-pulse beam with M2 less than 1.3.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY |
title | MOPA with high-gain solid-state amplifier |
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