MOPA with high-gain solid-state amplifier

MOPA with high-gain solid-state amplifier

Radiation from a VBG-locked diode-laser at a locked wavelength of 878.6 nm is focused into a 30-mm long Nd:YVO4 optical amplifier crystal for optically pumping the crystal (24). The crystal amplifies a beam of seed-pulses from a fiber MOPA (12). The power of pump radiation is about 75 Watts. The rad...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: DAVID CLUBLEY, BURLY CUMBERLAND
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Radiation from a VBG-locked diode-laser at a locked wavelength of 878.6 nm is focused into a 30-mm long Nd:YVO4 optical amplifier crystal for optically pumping the crystal (24). The crystal amplifies a beam of seed-pulses from a fiber MOPA (12). The power of pump radiation is about 75 Watts. The radiation is focused into a beamwaist having a minimum diameter of about 600 micrometers. This provides an amplifier having a high gain-factor well over 100. The high-gain factor provides a gain-shaping effect on the seed-pulse beam which overcomes thermal aberrations inherent in such high-power pumping, thereby producing an amplified seed-pulse beam with M2 less than 1.3.