Improved metal to metal bonding for stacked (3D) integrated circuits

The present invention provides a stabilized fine textured metal microstructure that constitutes a durable activated surface usable for bonding a 3D stacked chip. A fine-grain layer that resists self anneal enables metal to metal bonding at moderate time and temperature and wider process flexibility.

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Bibliographische Detailangaben
Hauptverfasser: John A Fitzsimmons, Mukta G Farooq, Tien-jen J Cheng
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:The present invention provides a stabilized fine textured metal microstructure that constitutes a durable activated surface usable for bonding a 3D stacked chip. A fine-grain layer that resists self anneal enables metal to metal bonding at moderate time and temperature and wider process flexibility.