Atomic layer deposition

A method of depositing a material on a substrate using an atomic layer deposition process, wherein the deposition process comprises a first deposition step, a second deposition step subsequent to the first deposition step, and a delay of at least one minute between the first deposition step and the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Charles Anthony Nield Collis, Nathan Charles Brown, Sai Giridhar Shivareddy, Gehan Anjil Joseph Amaratunga, Youngjin Choi
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of depositing a material on a substrate using an atomic layer deposition process, wherein the deposition process comprises a first deposition step, a second deposition step subsequent to the first deposition step, and a delay of at least one minute between the first deposition step and the second deposition step. Each deposition step comprises a plurality of deposition cycles. The delay is introduced to the deposition process by prolonging a period of time for which a purge gas is supplied to a process chamber housing the substrate at the end of a selected one of the deposition cycles.