A field effect transistor

A field effect transistor

The device comprising a delta doped layer 222 formed between a lower intrinsic diamond layer 204 and an aluminium oxide gate dielectric layer 218. The delta layer may be formed by etching a thick epitaxial diamond layer in the gate region 210. Alternatively, a thin delta layer is epitaxially grown a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: PAUL GIDEON HUGGETT, JAMES PILKINGTON, RICHARD STUART BALMER, RICHARD JOHN LANG, CHRISTOPHER MAXWELL SNOWDEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The device comprising a delta doped layer 222 formed between a lower intrinsic diamond layer 204 and an aluminium oxide gate dielectric layer 218. The delta layer may be formed by etching a thick epitaxial diamond layer in the gate region 210. Alternatively, a thin delta layer is epitaxially grown and masked in the gate region prior to growing the adjacent non-delta source/drain regions 208. The doping concentration in the non-delta source/drain regions may be varied throughout the layer to provide highly doped source/drain contact regions.